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HSM276SR Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HSM276SR Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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HSM276SR 2 Electrical Characteristics (Ta = 25°C)*1 Item Symbol Min Typ Max Unit Test Condition Reverse voltage V R 3.0 — — V I R = 1mA Reverse current I R ——50 µAV R = 0.5V Forward current I F 35 — — mA V F = 0.5V Capacitance C — — 0.90 pF V R = 0.5V, f = 1MHz Capacitance deviation ∆C — — 0.10 pF V R = 0.5V, f = 1MHz ESD Capability — 30 — — V * 2C = 200pF, Both forward and reverse direction 1 pulse Notes: 1. Per one device 2. Failure Criterrion; I R ≥ 100µA at VR = 0.5V Forward voltage V (V) F 10 10 0 0.4 1.0 0.6 10 0.2 10 10 0.8 –2 –1 –3 –4 –5 Fig.1 Forward current Vs. Forward voltage |
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