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HSM276S Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. HSM276S
Description  Silicon Schottky Barrier Diode for Balanced Mixer
Download  5 Pages
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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HSM276S Datasheet(HTML) 2 Page - Hitachi Semiconductor

   
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HSM276S
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
3V
Average rectified current
I
O
30
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
V
R
3.0
V
I
R = 1 mA
Reverse current
I
R
——50
µAV
R = 0.5V
Forward current
I
F
35
——mA
V
F = 0.5V
Capacitance
C
0.90
pF
V
R = 0.5V, f = 1 MHz
Capacitance deviation
∆ C
0.10
pF
V
R = 0.5V, f = 1 MHz
ESD-Capability
*1
30
V
C=200pF , Both forward and reverse
direction 1 pulse.
Notes
1. Failure criterion ; IR
≥ 100µA at VR =0.5 V


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