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HSB276AS Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HSB276AS Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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HSB276AS 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Repetitive peak reverse voltage V RRM 5V Reverse voltage V R 3V Average rectified current I O *1 30 mA Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C Note 1. Per one device Electrical Characteristics (Ta = 25 °C) *2 Item Symbol Min Typ Max Unit Test Condition Reverse voltage V R 3— — V I R = 1 mA Reverse current I R —— 50 µAV R = 0.5V Forward current I F 35 — — mA V F = 0.5V Capacitance C — — 0.90 pF V R = 0.5V, f = 1 MHz Capacitance deviation ∆ C — — 0.10 pF V R = 0.5V, f = 1 MHz ESD-Capability *1 — 30 — — V C = 200pF , R = 0 Ω Both forward and reverse direction 1 pulse. Note 1. Failure criterion ; I R ≥ 100 µA at VR =0.5 V Note 2. Per one device |
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