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HSB276AS Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. HSB276AS
Description  Silicon Schottky Barrier Diode for Balanced Mixer
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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HSB276AS Datasheet(HTML) 2 Page - Hitachi Semiconductor

   
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HSB276AS
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Value
Unit
Repetitive peak reverse
voltage
V
RRM
5V
Reverse voltage
V
R
3V
Average rectified current
I
O
*1
30
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55 to +125
°C
Note
1. Per one device
Electrical Characteristics (Ta = 25
°C) *2
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
V
R
3—
V
I
R = 1 mA
Reverse current
I
R
——
50
µAV
R = 0.5V
Forward current
I
F
35
mA
V
F = 0.5V
Capacitance
C
0.90
pF
V
R = 0.5V, f = 1 MHz
Capacitance deviation
∆ C
0.10
pF
V
R = 0.5V, f = 1 MHz
ESD-Capability
*1
30
V
C = 200pF , R = 0
Both forward and reverse direction 1 pulse.
Note
1. Failure criterion ; I
R ≥ 100 µA at VR =0.5 V
Note
2. Per one device


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