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HRB0103B Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. HRB0103B
Description  Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
Download  6 Pages
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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HRB0103B Datasheet(HTML) 2 Page - Hitachi Semiconductor

   
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HRB0103B
2
Absolute Maximum Ratings (Ta = 25°C)
*1
Item
Symbol
Value
Unit
Repetitive peak reverse
voltage
V
RRM
30
V
Average rectified current
I
o
*2
100
mA
Non-Repetitive peak
forward surge current
I
FSM
*3
3A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55 to +150
°C
Note:
1. Per one device
Note:
2. See Fig.5, Two device total
Note:
3. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
0.44
V
I
F = 100 mA
Reverse current
I
R
——
50
µAV
R = 30V


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