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SI4401DY-T1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4401DY-T1 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 71226 S09-0322-Rev. D, 02-Mar-09 www.vishay.com 3 Vishay Siliconix Si4401DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.008 0.016 0.024 0.032 0.040 0 10203040 50 ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0 2 4 6 8 10 0 15304560 75 VDS = 15 V ID = 10.5 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 50 10 1 VSD - Source-to-Drain Voltage (V) TJ = 150 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 1300 2600 3900 5200 6500 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Coss Ciss Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 10.5 A TJ -Junction Temperature (°C) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 02 4 6 8 10 ID = 10.5 A VGS - Gate-to-Source Voltage (V) |
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