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HM62V8512BLTT-8UL Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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HM62V8512BLTT-8UL Datasheet(HTML) 1 Page - Hitachi Semiconductor |
1 / 17 page HM62V8512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-905G (Z) Rev. 6.0 Mar. 31, 2000 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512B is suitable for battery backup system. Features • Single 3.0 V supply: 2.7 V to 3.6 V • Access time: 70/85 ns (max) • Power dissipation Active: 15 mW/MHz (typ) Standby: 3 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output: Three state output • Directly LV-TTL compatible: All inputs • Battery backup operation |
Similar Part No. - HM62V8512BLTT-8UL |
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Similar Description - HM62V8512BLTT-8UL |
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