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NES1823P-100 Datasheet(PDF) 2 Page - NEC

Part No. NES1823P-100
Description  100W L-BAND PUSH-PULL POWER GaAs MESFET
Download  20 Pages
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NES1823P-100 Datasheet(HTML) 2 Page - NEC

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Preliminary Data Sheet
2
NES1823P-100
RECOMMENDED OPERATING LIMITS
Parameter
Symbol
Test Condition
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
10.0
10.0
V
Gain Compression
Gcomp
3.0
dB
Channel Temperature
Tch
+150
°C
Set Drain Current
Note 1
IDset
6.0
8.0
A
Gate Resistance
Note 2
Rg
10
12.5
Notes 1. IDset = 3.0 A each drain, VDS = 10 V, RF OFF.
2. Rg is the series resistance between the gate supply and FET gate.
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
IDSS
VDS = 2.5 V, VGS = 0 V
76
A
Pinch-off Voltage
Vp
VDS = 2.5 V, IDS = 330 mA
–4.0
–2.6
V
Thermal Resistance
Rth
Channel to Case
0.6
0.8
°C/W
Output Power
Pout
49.0
50.0
dBm
Drain Current
ID
20.0
32.5
A
Drain Efficiency
ηD
50
%
Linear Gain
GL
f = 2.2 GHz, VDS = 10 V
Pin = +42.5 dBm, Rg = 12.5
IDset = 6.0 A Total (RF OFF)
Note
9.0
11.0
dB
Note IDset = 3.0 A each drain


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