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NES1823P-100 Datasheet(PDF) 2 Page - NEC |
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NES1823P-100 Datasheet(HTML) 2 Page - NEC |
2 / 20 page Preliminary Data Sheet 2 NES1823P-100 RECOMMENDED OPERATING LIMITS Parameter Symbol Test Condition MIN. TYP. MAX. Unit Drain to Source Voltage VDS 10.0 10.0 V Gain Compression Gcomp 3.0 dB Channel Temperature Tch +150 °C Set Drain Current Note 1 IDset 6.0 8.0 A Gate Resistance Note 2 Rg 10 12.5 Ω Notes 1. IDset = 3.0 A each drain, VDS = 10 V, RF OFF. 2. Rg is the series resistance between the gate supply and FET gate. ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Saturated Drain Current IDSS VDS = 2.5 V, VGS = 0 V 76 A Pinch-off Voltage Vp VDS = 2.5 V, IDS = 330 mA –4.0 –2.6 V Thermal Resistance Rth Channel to Case 0.6 0.8 °C/W Output Power Pout 49.0 50.0 dBm Drain Current ID 20.0 32.5 A Drain Efficiency ηD 50 % Linear Gain GL f = 2.2 GHz, VDS = 10 V Pin = +42.5 dBm, Rg = 12.5 Ω IDset = 6.0 A Total (RF OFF) Note 9.0 11.0 dB Note IDset = 3.0 A each drain |
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