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STB30NF20 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STB30NF20
Description  N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB30NF20 Datasheet(HTML) 5 Page - STMicroelectronics

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STP30NF20 - STW30NF20 - STB30NF20
Electrical characteristics
5/16
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=100V, ID=15A,
RG=4.7Ω, VGS=10V
(see Figure 16)
35
15.7
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=100V, ID=15A,
RG=4.7Ω, VGS=10V
(see Figure 16)
38
8.8
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
30
120
A
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=30A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=30A, di/dt = 100A/µs,
VDD=100 V, Tj=25°C
155
0.96
12.4
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=30A, di/dt = 100A/µs,
VDD=100 V, Tj=150°C
194
1.42
14.6
ns
µC
A


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