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STB30NF20 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB30NF20 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page STP30NF20 - STW30NF20 - STB30NF20 Electrical characteristics 5/16 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=100V, ID=15A, RG=4.7Ω, VGS=10V (see Figure 16) 35 15.7 ns ns td(off) tf Turn-off delay time Fall time VDD=100V, ID=15A, RG=4.7Ω, VGS=10V (see Figure 16) 38 8.8 ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 30 120 A A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=30A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=30A, di/dt = 100A/µs, VDD=100 V, Tj=25°C 155 0.96 12.4 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=30A, di/dt = 100A/µs, VDD=100 V, Tj=150°C 194 1.42 14.6 ns µC A |
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