STW30NF20 datasheet(3/16 Pages) STMICROELECTRONICS

Part #	STW30NF20

Description	N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET

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STP30NF20 - STW30NF20 - STB30NF20

Electrical ratings

3/16

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

200

V

VGS

Gate-source voltage

±20

V

ID

Drain current (continuous) at TC = 25°C

30

A

ID

Drain current (continuous) at TC=100°C

19

A

IDM

(1)

1.

Pulse width limited by safe operating area

Drain current (pulsed)

120

A

PTOT

Total dissipation at TC = 25°C

125

W

Derating factor

1

W/°C

dv/dt(2)

2.

ISD ≤ 30A, di/dt ≤ 200A/µs, VDD = 80%V(BR)DSS

Peak diode recovery voltage slope

10

V/ns

TJ

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Tl

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Thermal data

Symbol

Parameter

TO-220/

D²PAK

TO-247

Unit

RthJC

Thermal resistance junction-case max

1

°C/W

RthJA

Thermal resistance junction-ambient max

62.5

50

°C/W

Table 4.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

30

A

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID=IAR, VDD=50V)

140

mJ

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