NE713 datasheet(1/16 Pages) NEC

Part #	NE713

Description	L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

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GaAs MES FET

NE713

L to Ku BAND LOW NOISE AMPLIFIER

N-CHANNEL GaAs MES FET

DATA SHEET

Document No. P11691EJ2V0DS00 (2nd edition)

Date Published February 1997 N

Printed in Japan

©

1996

FEATURES

x Low noise figure

NF = 0.6 dB TYP. at f = 4 GHz

x High associated gain

Ga = 14 dB TYP. at f = 4 GHz

x Gate width: Wg = 280

Pm

x Gate Length: Lg = 0.3

Pm

ORDERING INFORMATION

PART NUMBER

I DSS (mA)

PACKAGE CODE

NE71300-N

20 to 50

00 (CHIP)

NE71300-M

50 to 80

NE71300-L

80 to 120

NE71383B

20 to 120

83B

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

VDS

5.0

V

Gate to Source Voltage

VGSO

ð5.0

V

Gate to Drain Voltage

VGDO

ð6.0

V

Drain Current

ID

IDSS

mA

Total Power Dissipation

Ptot

270

mW

[NE71383B]

400

mW

[NE71300]

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

ð65 to +175

°C

RECOMMENDED OPERATING CONDITION (TA = 25 °C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

Unit

Drain to Source Voltage

VDS

34

V

Drain Current

ID

10

30

mA

Input Power

15

dBm

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