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PSMN2R2-40BS Datasheet(PDF) 6 Page - NXP Semiconductors

Part # PSMN2R2-40BS
Description  N-channel 40 V 2.2 m standard level MOSFET in D2PAK
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN2R2-40BS Datasheet(HTML) 6 Page - NXP Semiconductors

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PSMN2R2-40BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 20 March 2012
6 of 15
NXP Semiconductors
PSMN2R2-40BS
N-channel 40 V 2.2 m
Ω standard level MOSFET in D2PAK
7.
Characteristics
Table 7.
Characteristics
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown voltage ID = 250 µA; VGS =0V; Tj = -55 °C
36
-
-
V
ID = 250 µA; VGS =0V; Tj = 25 °C
40
--V
VGS(th)
gate-source threshold voltage
ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--4.6
V
ID =1mA; VDS =VGS; Tj =175 °C;
see Figure 11
1
--V
ID =1mA; VDS =VGS; Tj =25°C;
see Figure 12; see Figure 11
234V
IDSS
drain leakage current
VDS =40 V; VGS =0 V; Tj = 25 °C
-
0.02
10
µA
VDS =40 V; VGS =0 V; Tj = 125 °C
-
-
200
µA
IGSS
gate leakage current
VGS =20V; VDS =0 V; Tj = 25 °C
-
10
100
nA
VGS =-20 V; VDS =0V; Tj = 25 °C
-
10
100
nA
RDSon
drain-source on-state resistance VGS =10V; ID =25A; Tj =100 °C;
see Figure 6
-
2.73
3.2
m
VGS =10V; ID =25A; Tj =175 °C;
see Figure 13; see Figure 6
-
3.76
4.4
m
VGS =10V; ID =25A; Tj =25°C;
see Figure 6; see Figure 13
-
1.88
2.2
m
RG
internal gate resistance (AC)
f = 1 MHz
-
1
-
Dynamic characteristics
QG(tot)
total gate charge
ID =0A; VDS =0V; VGS = 10 V
-110
-nC
ID =25A; VDS =20 V; VGS =10 V;
see Figure 14; see Figure 15
-
130
-
nC
QGS
gate-source charge
-
42
-
nC
QGS(th)
pre-threshold gate-source
charge
-24
-nC
QGS(th-pl)
post-threshold gate-source
charge
-18
-nC
QGD
gate-drain charge
-
25
-
nC
VGS(pl)
gate-source plateau voltage
ID =25A; VDS =20 V; see Figure 14;
see Figure 15
-4.95
-V
Ciss
input capacitance
VDS =20 V; VGS =0 V; f =1 MHz;
Tj =25°C; see Figure 16
-
8423
-
pF
Coss
output capacitance
-
1671
-
pF
Crss
reverse transfer capacitance
-
814
-
pF
td(on)
turn-on delay time
VDS =20 V; RL =0.25 Ω; VGS =10V;
RG(ext) =1.5 Ω
-
33.2
-
ns
tr
rise time
-
40.4
-
ns
td(off)
turn-off delay time
-
66.6
-
ns
tf
fall time
-
25.2
-
ns


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