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PSMN2R2-40BS Datasheet(PDF) 6 Page - NXP Semiconductors |
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PSMN2R2-40BS Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page PSMN2R2-40BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 20 March 2012 6 of 15 NXP Semiconductors PSMN2R2-40BS N-channel 40 V 2.2 m Ω standard level MOSFET in D2PAK 7. Characteristics Table 7. Characteristics Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS =0V; Tj = -55 °C 36 - - V ID = 250 µA; VGS =0V; Tj = 25 °C 40 --V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 11 --4.6 V ID =1mA; VDS =VGS; Tj =175 °C; see Figure 11 1 --V ID =1mA; VDS =VGS; Tj =25°C; see Figure 12; see Figure 11 234V IDSS drain leakage current VDS =40 V; VGS =0 V; Tj = 25 °C - 0.02 10 µA VDS =40 V; VGS =0 V; Tj = 125 °C - - 200 µA IGSS gate leakage current VGS =20V; VDS =0 V; Tj = 25 °C - 10 100 nA VGS =-20 V; VDS =0V; Tj = 25 °C - 10 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj =100 °C; see Figure 6 - 2.73 3.2 m Ω VGS =10V; ID =25A; Tj =175 °C; see Figure 13; see Figure 6 - 3.76 4.4 m Ω VGS =10V; ID =25A; Tj =25°C; see Figure 6; see Figure 13 - 1.88 2.2 m Ω RG internal gate resistance (AC) f = 1 MHz - 1 - Ω Dynamic characteristics QG(tot) total gate charge ID =0A; VDS =0V; VGS = 10 V -110 -nC ID =25A; VDS =20 V; VGS =10 V; see Figure 14; see Figure 15 - 130 - nC QGS gate-source charge - 42 - nC QGS(th) pre-threshold gate-source charge -24 -nC QGS(th-pl) post-threshold gate-source charge -18 -nC QGD gate-drain charge - 25 - nC VGS(pl) gate-source plateau voltage ID =25A; VDS =20 V; see Figure 14; see Figure 15 -4.95 -V Ciss input capacitance VDS =20 V; VGS =0 V; f =1 MHz; Tj =25°C; see Figure 16 - 8423 - pF Coss output capacitance - 1671 - pF Crss reverse transfer capacitance - 814 - pF td(on) turn-on delay time VDS =20 V; RL =0.25 Ω; VGS =10V; RG(ext) =1.5 Ω - 33.2 - ns tr rise time - 40.4 - ns td(off) turn-off delay time - 66.6 - ns tf fall time - 25.2 - ns |
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