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NE6500496 Datasheet(PDF) 1 Page - NEC

Part No. NE6500496
Description  4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
Logo NEC - NEC

NE6500496 Datasheet(HTML) 1 Page - NEC

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©
1996
PRELIMINARY DATA SHEET
GaAs MES FET
NE6500496
4 W L, S-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE6500496 is power GaAs FET which provides high
gain, high efficiency and high output power in L, S band.
To reduce thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
FEATURES
Class A operation
High output power: 36 dBm (typ)
High gain: 11.5 dB (typ)
High power added efficiency: 45 % (typ)
Hermetically sealed ceramic package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSX
15
V
Gate to Drain Voltage
VGDX
–18
V
Gate to Source Voltage
VGSX
–12
V
Drain Current
ID
4.5
A
Gate Current
IG
25
mA
Total Power Dissipation
PT(*)25
W
Channel Temperature
Tch
175
˚C
Storage Temperature
Tstg
–65 to +175
˚C
Temperature Cycling
T
–40 to +120
˚C
* TC = 25 ˚C
Caution
Please handle this device at a static-free workstation, because this is an electrostatic sensitive
device.
Document No. P10971EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
4.0 MIN BOTHLEADS
SOURCE
GATE
DRAIN
0.6 ±0.1
5.2 ±0.3
6.0 ±0.2
11.0 ±0.3
15.0 ±0.3
0.1
1.2
0.2 MAX.
1.0 ± 0.1
2.2 ±0.3
2 SLACES
φ
4.3 ±0.2
1.7 ±0.15
4.0
5.0 MAX.
PACKAGE DIMENSION (UNIT: mm)


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