The information in this document is subject to change without notice.

N-CHANNEL GaAs MES FET

NE6500379A

3W L, S-BAND POWER GaAs MESFET

1998

©

Document No. P13495EJ2V0DS00 (2nd edition)

Date Published August 1998 N CP(K)

Printed in Japan

DATA SHEET

The mark

shows major revised points.

DESCRIPTION

The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile

communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high

linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s

stringent quality and control procedures.

FEATURES

•

High Output Power

•

High Linear Gain

: 10 dB typ.

•

ORDERING INFORMATION

Part Number

Package

Supplying Form

NE6500379A-T1

79A

12 mm tape width, 1 kpcs/reel

Remark

To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: NE6500379A)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

15

V

Gate to Source Voltage

–7

V

Drain Current

5.6

A

Gate Current

50

mA

Total Power Dissipation

21

W

Channel Temperature

150

°C

Storage Temperature

–65 to +150

°C

Caution

Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.