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TC6320K6-G Datasheet(PDF) 3 Page - Supertex, Inc |
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TC6320K6-G Datasheet(HTML) 3 Page - Supertex, Inc |
3 / 6 page 3 TC6320 Supertex inc. www.supertex.com Doc.# DSFP-TC6320 D012913 N-Channel Electrical Characteristics (T C = 25°C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BV DSS DRAIN-to-SOURCE breakdown voltage 200 - - V V GS = 0V, ID = 2.0mA V GS(th) GATE threshold voltage 1.0 - 2.0 V V GS = VDS, ID = 1.0mA ΔV GS(th) Change in V GS(th) with temperature - - -4.5 mV/OC V GS = VDS, ID = 1.0mA R GS GATE-to-SOURCE shunt resistor 10 - 50 kΩ I GS = 100µA VZ GS GATE-to-SOURCE Zener voltage 13.2 - 25 V I GS = 2.0mA I DSS Zero GATE voltage DRAIN current - - 10.0 µA V DS = Max rating, VGS = 0V - - 1.0 mA V DS = 0.8 Max Rating, V GS = 0V, TA = 125 O C I D(ON) On-state DRAIN current 1.0 - - A V GS = 4.5V, VDS = 25V 2.0 - - V GS = 10V, VDS = 25V R DS(ON) Static DRAIN-to-SOURCE on-state resistance - - 8.0 Ω V GS = 4.5V, ID = 150mA - - 7.0 V GS = 10V, ID = 1.0A ΔR DS(ON) Change in R DS(ON) with temperature - - 1.0 %/OC V GS = 4.5V, ID =150mA G FS Forward transconductance 400 - - mmho V DS = 25V, ID = 500mA C ISS Input capacitance - - 110 pF V GS = 0V, V DS = 25V, f = 1.0MHz C OSS Common SOURCE output capacitance - - 60 C RSS Reverse transfer capacitance - - 23 t d(ON) Turn-on delay time - - 10 ns V DD =25V, I D = 1.0A, R GEN = 25Ω t r Rise time - - 15 t d(OFF) Turn-off delay time - - 20 t f Fall time - - 15 V SD Diode forward voltage drop - - 1.8 V V GS = 0V, ISD = 500mA t rr Reverse recovery time - 300 - ns V GS = 0V, ISD = 500mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. N-Channel Switching Waveforms and Test Circuit 10V 0V 0V VDD Input Output 10% 90% 90% 10% 90% 10% R GEN Input Pulse Generator V DD R L D.U.T OUTPUT t r t f t d(ON) t (ON) t d(OFF) t (OFF) |
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Similar Description - TC6320K6-G |
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