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SSPL6005 Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSPL6005 Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
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2 / 8 page  SSPL6005 ©Silikron Semiconductor CO.,LTD. 2011.11.20 Version : 1.1 page 2 of 8 www.silikron.com Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case ③ — 0.65 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characterizes @T A=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 60 — — V VGS = 0V, ID= 250μA RDS(on) Static Drain-to-Source on-resistance — 4.9 5.5 mΩ VGS=10V,ID =75A — 8.8 — TJ = 125℃ VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 150μA — 2.11 — TJ = 125℃ IDSS Drain-to-Source leakage current — — 1 μA VDS =60V,VGS = 0V — — 50 TJ = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS =20V -100 — — VGS = -20V Qg Total gate charge — 99.5 — nC ID = 75A, VDS=30V, VGS = 10V Qgs Gate-to-Source charge — 27.6 — Qgd Gate-to-Drain("Miller") charge — 36.4 — td(on) Turn-on delay time — 20.0 — nS VGS=10V, VDD =30V, RL=0.4Ω, RGEN=2.7Ω ID =75A tr Rise time — 87.6 — td(off) Turn-Off delay time — 44.5 — tf Fall time — 20.1 — Ciss Input capacitance — 7916 — pF VGS = 0V VDS = 50V ƒ = 1MHz Coss Output capacitance — 733 — Crss Reverse transfer capacitance — 60 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 160 ① A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 640 A V SD Diode Forward Voltage — 0.87 1.3 V IS=75A, VGS=0V, TJ = 25°C trr Reverse Recovery Time — 45.7 — nS TJ = 25°C, IF =75A, di/dt = 100 A/μs Qrr Reverse Recovery Charge — 82.5 — nC |
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