Main Product Characteristics:

80V

4.5mohm

180A

2010.12.14

Version : 3.0

page

1of7

www.silikron.com

 

 

Features and Benefits:

TO-220AB

TO-220AB

Advanced trench MOSFET process technology

Special designed for PWM, load switching and general purpose applications

Ultra low on-resistance with low gate charge

Fast switching and reverse body recovery

175℃ operating temperature

Description:

It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve

extremely low on resistance, fast switching speed and short reverse recovery time. These features

combine to make this design an extremely efficient and reliable device for use in PWM, load switching

and a wide variety of other applications

Absolute max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V①

180

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V①

135

IDM

500

ISM

500

A

PD @TC = 25°C

346

W

PD @TC =100°C

178

W

VDS

Drain-Source Voltage

80

V

VGS

Gate-to-Source Voltage

± 25

V

EAS

450

mJ

IAR

95

A

TJ TSTG

Operating Junction and Storage Temperature

Range

-55 to + 175

°C

Thermal Resistance

Symbol

Characterizes

Value

Unit

0.34

℃

/W

12

℃

/W

55

℃

/W