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SW75N75 Datasheet(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW75N75 Datasheet(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd. |
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2 / 5 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0 2/5 SAMWIN Electrical characteristic ( T C = 25 oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 75 - - V ΔBV DSS / ΔT J Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.07 - V/oC IDSS Drain to source leakage current VDS=75V, VGS=0V - - 1 uA VDS=75V, TC=125oC - - 20 uA IGSS Gate to source leakage current, forward VGS=20V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V - - -100 nA On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2.0 - 4.0 V RDS(ON) Drain to source on state resistance VGS=10V, ID = 37.5A 6 8 m Ω Gfs Forward Transconductance VDS = 40 V, ID = 37.5 A 20 S Dynamic characteristics Ciss Input capacitance VGS=0V, VDS=25V, f=1MHz 960 1260 pF Coss Output capacitance 110 135 Crss Reverse transfer capacitance 15 18 td(on) Turn on delay time VDS=60V, ID=75A, RG=25Ω (note 4，5) 37 80 ns tr Rising time 67 100 td(off) Turn off delay time 72 150 tf Fall time 30 80 Qg Total gate charge VDS=37.5V, VGS=10V, ID=75A (note 4，5) 126 180 nC Qgs Gate-source charge 46 - Qgd Gate-drain charge 47 - Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IS Continuous source current Integral reverse p-n Junction diode in the MOSFET - - 75 A ISM Pulsed source current - - 300 A VSD Diode forward voltage drop. IS=75A, VGS=0V - - 1.5 V Trr Reverse recovery time IS=75A, VGS=0V, dIF/dt=100A/us - 36.5 - ns Qrr Breakdown voltage charge - 52 - nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 0.36mH, IAS = 75A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 75A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. SW75N75 |
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