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SSF7504A7 Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSF7504A7 Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
2 / 8 page SSF7504A7 ©Silikron Semiconductor CO.,LTD. 2013.07.25 Version : 1.0 page 2 of 8 www.silikron.com Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case ③ — 0.45 ℃/W RθJA Junction-to-ambient (t ≤ 10s)④ — 62 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 75 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 2.5 4.0 m Ω VGS=10V,ID = 40A — 4.1 — TJ = 125°C VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA — 2.17 — TJ = 125°C IDSS Drain-to-Source leakage current — — 1 μA VDS =75V,VGS = 0V — — 50 TJ = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS =20V — — -100 VGS = -20V Qg Total gate charge — 282 — nC ID = 40A, VDS=60V, VGS = 10V Qgs Gate-to-Source charge — 51 — Qgd Gate-to-Drain("Miller") charge — 110 — td(on) Turn-on delay time — 29 — nS VGS=10V, VDS =38V, RL=0.95Ω, RGEN=1.2Ω ID =40A tr Rise time — 85 — td(off) Turn-Off delay time — 93 — tf Fall time — 81 — Ciss Input capacitance — 10747 — pF VGS = 0V VDS = 25V ƒ = 600KHz Coss Output capacitance — 833 — Crss Reverse transfer capacitance — 788 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 220 ① A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 880 A V SD Diode Forward Voltage — 0.81 1.3 V IS=40A, VGS=0V trr Reverse Recovery Time — 53 — nS TJ = 25°C, IF =40A, di/dt = 10 0A/μs Qrr Reverse Recovery Charge — 114 — nC |
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