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NE3210S01 Datasheet(PDF) 1 Page - NEC |
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NE3210S01 Datasheet(HTML) 1 Page - NEC |
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1 / 16 page  The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET Document No. P14067EJ2V0DS00 (2nd edition) Date Published November 1999 N CP(K) Printed in Japan DATA SHEET 1999 © The mark shows major revised points. DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Supplying Form Marking NE3210S01-T1 Tape & reel 1 000 pcs./reel NE3210S01-T1B Tape & reel 4 000 pcs./reel K Remark For sample order, please contact your local NEC sales office. (Part number for sample order: NE3210S01) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS –3.0 V Drain Current ID IDSS mA Gate Current IG 100 µA Total Power Dissipation Ptot 165 mW Channel Temperature Tch 125 °C Storage Temperature Tstg –65 to +125 °C RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Characteristics Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 123 V Drain Current ID 510 15 mA Input Power Pin ––0 dBm |
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