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NE3210S01 Datasheet(PDF) 1 Page - NEC

Part # NE3210S01
Description  X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NE3210S01 Datasheet(HTML) 1 Page - NEC

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Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
Document No. P14067EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1999
©
The mark
shows major revised points.
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
Gate Length: Lg
≤ 0.20
µm
Gate Width : Wg = 160
µm
ORDERING INFORMATION (PLAN)
Part Number
Supplying Form
Marking
NE3210S01-T1
Tape & reel 1 000 pcs./reel
NE3210S01-T1B
Tape & reel 4 000 pcs./reel
K
Remark For sample order, please contact your local NEC sales office. (Part number for sample order: NE3210S01)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
Total Power Dissipation
Ptot
165
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–65 to +125
°C
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
123
V
Drain Current
ID
510
15
mA
Input Power
Pin
––0
dBm


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