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SSF6808A Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF6808A Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 5 page  ©Silikron Semiconductor Corporation 2008.8.1 Version: 1.1 page 1 of 5 SSF6808A Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 84 A ID@Tc=100ْC Continuous drain current,VGS@10V 76 IDM Pulsed drain current ① 310 PD@TC=25ْC Power dissipation 180 W Linear derating factor 1.5 W / ْC VGS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 31 v/ns EAS Single pulse avalanche energy ② 400 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +175 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.83 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 68 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 5 8 m Ω VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 4.0 V VDS=VGS,ID=250μA IDSS Drain-to-Source leakage current — — 2 μA VDS=68V,VGS=0V — — 10 VDS=68V, VGS=0V,TJ=150ْC SSF6808A TOP View (TO-263) ID =84A BV=68V Rdson=8mohm Feathers: Advanced trench process technology Ultra low Rdson, typical 5mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808A is a new generation of middle voltage and high current N –Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6808A is assembled in high reliability and qualified assembly house. Application: Power switching application |
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