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HB288032A5 Datasheet(PDF) 56 Page - Hitachi Semiconductor |
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HB288032A5 Datasheet(HTML) 56 Page - Hitachi Semiconductor |
56 / 66 page HB288800/640/448/320/256/192/160/128/096/064/032A5 56 Attribute Memory Write AC Characteristics 250 ns Parameter Symbol Min Typ Max Unit Write cycle time tCW 250 — — ns Write pulse time tw(WE) 150 — — ns Address setup time tsu(A) 30 — — ns Address setup time (-WE) tsu(A-WEH) 180 — — ns -CE setup time (-WE) tsu(CE-WEH) 180 — — ns Data setup time (-WE) tsu(D-WEH) 80 — — ns Data hold time th(D) 30 — — ns Write recover time trec(WE) 30 — — ns Output disable time (-WE) tdis(WE) — — 100 ns Output disable time (-OE) tdis(OE) — — 100 ns Output enable time (-WE) ten(WE) 5 — — ns Output enable time (-OE) ten(OE) 5 — — ns Output enable setup time (-WE) tsu(OE-WE) 10 — — ns Output enable hold time (-WE) th(OE-WE) 10 — — ns -CE setup time tsu(CE) 0 — — ns -CE hold time th(CE) 20 — — ns Attribute Memory Write Timing A0 to A10 -REG -CE2/-CE1 -OE D0 to D15(Din) D0 to D15(Dout) tsu(CE) tsu(D-WEH) Input Data tdis(WE) tdis(OE) ten(WE) ten(OE) th(D) th(OE-WE) trec(WE) th(CE) tsu(OE-WE) tsu(A) -IOWR, -IORD : High Fix -WE tCW tsu(CE-WEH) tsu(A-WEH) tw(WE) |
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