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SSF7NS65UG Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSF7NS65UG Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
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2 / 8 page  SSF7NS65UG ©Silikron Semiconductor CO.,LTD. 2013.08.27 Version : 1.0 page 2 of 8 www.silikron.com Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case ③ — 3.0 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 650 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 0.65 0.75 Ω VGS=10V,ID = 1A — 1.38 — TJ = 125°C — 0.77 0.85 Ω VGS=10V,ID = 4.8A — 2.0 — TJ = 125°C VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA — 2.2 — TJ = 125°C IDSS Drain-to-Source leakage current — — 1 μA VDS =650V,VGS = 0V — — 50 TJ = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS =30V — — -100 VGS = -30V Qg Total gate charge — 13 — nC ID = 5A, VDS=200V, VGS = 10V Qgs Gate-to-Source charge — 2.6 — Qgd Gate-to-Drain("Miller") charge — 3.1 — td(on) Turn-on delay time — 9.6 — ns VGS=10V, VDS =400V, RGEN=10.2Ω,ID =2.2A tr Rise time — 6 — td(off) Turn-Off delay time — 26 — tf Fall time — 10 — Ciss Input capacitance — 500 — pF VGS = 0V VDS = 100V ƒ = 1MHz Coss Output capacitance — 24 — Crss Reverse transfer capacitance — 3 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 7 ① A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 28 A V SD Diode Forward Voltage — 0.85 1.2 V IS=4.8A, VGS=0V trr Reverse Recovery Time — 111 — nS TJ = 25°C, IF = 2.2A, di/dt = 10 0A/μs Qrr Reverse Recovery Charge — 639 — nC |
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