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SSF2N60D Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSF2N60D Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
2 / 8 page SSF2N60D ©Silikron Semiconductor CO.,LTD. 2013.08.27 Version : 1.0 page 2 of 8 www.silikron.com Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 2.95 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 110 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 600 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 3.8 4.5 Ω VGS=10V,ID = 1.0A — 8.2 — TJ = 125℃ VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA — 2.4 — TJ = 125℃ IDSS Drain-to-Source leakage current — — 1 μA VDS = 600V,VGS = 0V — — 50 TJ = 125℃ IGSS Gate-to-Source forward leakage — — 100 nA VGS =30V — — -100 VGS = -30V Qg Total gate charge — 5.7 — nC ID = 2.0A, VDS=480V, VGS = 10V Qgs Gate-to-Source charge — 1.7 — Qgd Gate-to-Drain("Miller") charge — 2.0 — td(on) Turn-on delay time — 9.1 — ns VGS=10V, VDS=300V, RGEN=25Ω, ID=2.0A tr Rise time — 6.3 — td(off) Turn-Off delay time — 23 — tf Fall time — 13 — Ciss Input capacitance — 329 — pF VGS = 0V VDS = 25V ƒ = 1MHz Coss Output capacitance — 32 — Crss Reverse transfer capacitance — 4 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 2 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 8 A V SD Diode Forward Voltage — 0.84 1.4 V IS=1.9A, VGS=0V trr Reverse Recovery Time — 357 — ns TJ = 25°C, IF =2A, di/dt = 10 0A/μs Qrr Reverse Recovery Charge — 1030 — nC |
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