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BB403M Datasheet(PDF) 1 Page - Hitachi Semiconductor

Part No. BB403M
Description  Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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BB403M Datasheet(HTML) 1 Page - Hitachi Semiconductor

 
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BB403M
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-699A (Z)
2nd. Edition
Nov. 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High forward transfer admittance;
(|yfs| = 42 mS typ. at f = 1 kHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R (SOT-143 var.)
Outline
MPAK-4R
2
1
4
3
1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is “CX–”.
2. BB403M is individual type number of HITACHI BBFET.


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