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BB305C Datasheet(PDF) 3 Page - Hitachi Semiconductor

Part No. BB305C
Description  Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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BB305C Datasheet(HTML) 3 Page - Hitachi Semiconductor

 
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BB305C
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
12——VI
D = 200µA, VG1S = VG2S = 0
Gate1 to source breakdown
voltage
V
(BR)G1SS
+10
——VI
G1 = +10 µA, VG2S = VDS = 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
±10
——VI
G2 = ±10µA, VG1S = VDS = 0
Gate1 to source cutoff current I
G1SS
+100
nA
V
G1S = +9V, VG2S = VDS = 0
Gate2 to source cutoff current I
G2SS
——
±100 nA
V
G2S = ±9V, VG1S = VDS = 0
Gate1 to source cutoff voltage V
G1S(off)
0.4
1.0
V
V
DS = 5V, VG2S = 4V, ID = 100µA
Gate2 to source cutoff voltage V
G2S(off)
0.4
1.0
V
V
DS = 5V, VG1S = 5V, ID = 100µA
Input capacitance
C
iss
2.3
2.8
3.5
pF
V
DS = 5V, VG1 = 5V
Output capacitance
C
oss
1.1
1.5
1.9
pF
V
G2S =4V, RG = 82kΩ
Reverse transfer capacitance C
rss
0.017
0.04
pF
f = 1MHz
Drain current
I
D(op) 1
10
1520mA
V
DS = 5V, VG1 = 5V, VG2S = 4V,
R
G = 82kΩ
I
D(op) 2
13
mA
V
DS = 9V, VG1 = 9V, VG2S =6V,
R
G = 220kΩ
Forward transfer admittance
|y
fs|1
23
28
mS
V
DS = 5V, VG1 = 5V, VG2S =4V
R
G =82kΩ, f = 1kHz
|y
fs|2
28
mS
V
DS = 9V, VG1 = 9V, VG2S =6V,
R
G = 220kΩ, f = 1kHz
Power gain
PG1
24
28
dB
V
DS = 5V, VG1 = 5V, VG2S =4V,
R
G = 82kΩ, f = 200MHz
PG2
28
dB
V
DS = 9V, VG1 = 9V, VG2S =6V,
R
G = 220kΩ, f = 200MHz
Noise figure
NF1
1.3
1.8
dB
V
DS = 5V, VG1 = 5V, VG2S =4V,
R
G = 82kΩ, f = 200MHz
NF2
1.3
dB
V
DS = 9V, VG1 = 9V, VG2S =6V,
R
G = 220kΩ, f = 200MHz


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