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BB304C Datasheet(PDF) 6 Page - Hitachi Semiconductor

Part No. BB304C
Description  Build in Biasing Circuit MOS FET IC UHF RF Amplifier
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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BB304C Datasheet(HTML) 6 Page - Hitachi Semiconductor

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BB304C
6
25
20
15
10
5
0
2
468
10
25
20
15
10
5
0
2
468
10
V
= 9 V
R
= 470 k
DS
G
Forward Transfer Admittance
vs. Gate1 Voltage
Drain Current vs. Gate1 Voltege
Gate1 Voltage
V
(V)
G1
Gate1 Voltage
V
(V)
G1
Drain Current vs. Gate1 Voltege
Forward Transfer Admittance
vs. Gate1 Voltage
Gate1 Voltage
V
(V)
G1
Gate1 Voltage
V
(V)
G1
4 V
3 V
2 V
30
24
18
12
6
0
2
468
10
30
24
18
12
6
0
2
468
10
V
= 9 V
R
= 390 k
f = 1 kHz
DS
G
V
= 1 V
G2S
2 V
V
= 9 V
R
= 470 k
f = 1 kHz
DS
G
5 V
6 V
3 V
5 V
6 V
4 V
V
= 1 V
G2S
V
= 9 V
R
= 560 k
DS
G
4 V
3 V
2 V
5 V
6 V
V
= 1 V
G2S
V
= 1 V
G2S
2 V
3 V
5 V
6 V
4 V


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