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3SK318 Datasheet(PDF) 3 Page - Hitachi Semiconductor

Part No. 3SK318
Description  Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Download  9 Pages
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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3SK318 Datasheet(HTML) 3 Page - Hitachi Semiconductor

   
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background image
3SK318
3
200
150
100
50
0
50
100
150
200
20
16
12
8
4
0
12
3
4
5
20
16
12
8
4
0
12
34
5
0
2
468
10
V
= 3 V
G2S
Ambient Temperature
Ta (
°C)
Maximum Channel Power
Dissipation Curve
Drain to Source Voltage
V
(V)
DS
Typical Output Characteristics
Gate1 to Source Voltage
V
(V)
G1S
Gate2 to Source Voltage
V
(V)
G2S
Drain Current vs.
Gate1 to Source Voltage
4
8
12
16
20
0.9 V
1.0 V
1.1 V
1.2 V
1.3 V
1.6 V
1.5 V
1.4 V
V
= 1.7 V
G1S
0.8 V
Drain Current vs.
Gate2 to Source Voltage
V
= 3.5 V
DS
V
= 3.5 V
DS
2.0 V
V
= 1.0 V
G1S
1.2 V
1.4 V
1.6 V
1.8 V
2.0 V
2.5 V
1.5 V
V
= 1.0 V
G2S


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