Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

3SK297 Datasheet(PDF) 3 Page - Hitachi Semiconductor

Part No. 3SK297
Description  Silicon N-Channel Dual Gate MOS FET
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

3SK297 Datasheet(HTML) 3 Page - Hitachi Semiconductor

  3SK297 Datasheet HTML 1Page - Hitachi Semiconductor 3SK297 Datasheet HTML 2Page - Hitachi Semiconductor 3SK297 Datasheet HTML 3Page - Hitachi Semiconductor 3SK297 Datasheet HTML 4Page - Hitachi Semiconductor 3SK297 Datasheet HTML 5Page - Hitachi Semiconductor 3SK297 Datasheet HTML 6Page - Hitachi Semiconductor 3SK297 Datasheet HTML 7Page - Hitachi Semiconductor 3SK297 Datasheet HTML 8Page - Hitachi Semiconductor 3SK297 Datasheet HTML 9Page - Hitachi Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 11 page
background image
3SK297
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
12
V
I
D = 200 µA , VG1S = –3 V,
V
G2S = –3 V
Gate 1 to source breakdown
voltage
V
(BR)G1SS
±8—
V
I
G1 = ±10 µA, VG2S = VDS = 0
Gate 2 to source breakdown
voltage
V
(BR) G2SS
±8—
V
I
G2 = ±10 µA, VG1S = VDS = 0
Gate 1 cutoff current
I
G1SS
——
±100
nA
V
G1S = ±6 V, VG2S = VDS = 0
Gate 2 cutoff current
I
G2SS
——
±100
nA
V
G2S = ±6 V, VG1S = VDS = 0
Drain current
I
DS(on)
0.5
10
mA
V
DS = 6 V, VG1S = 0.75V,
V
G2S = 3 V
Gate 1 to source cutoff voltage V
G1S(off)
0
+1.0
V
V
DS = 10 V, VG2S = 3V,
I
D = 100 µA
Gate 2 to source cutoff voltage V
G2S(off)
0
+1.0
V
V
DS = 10 V, VG1S = 3V,
I
D = 100 µA
Forward transfer admittance
|y
fs|
16
20
mS
V
DS = 6 V, VG2S = 3V,
I
D = 10 mA, f = 1 kHz
Input capacitance
Ciss
2.4
2.9
3.4
pF
V
DS = 6 V, VG2S = 3V,
I
D = 10 mA, f = 1 MHz
Output capacitance
Coss
0.8
1.0
1.4
pF
Reverse transfer capacitance
Crss
0.023
0.04
pF
Power gain
PG
22
25
dB
V
DS = 6 V, VG2S = 3V,
I
D = 10 mA, f = 200 MHz
Noise figure
NF
1.0
1.8
dB
Power gain
PG
12
15
dB
V
DS = 6 V, VG2S = 3V,
I
D = 10 mA, f = 900 MHz
Noise figure
NF
3.2
4.5
dB
Noise figure
NF
2.8
3.5
dB
V
DS = 6 V, VG2S = 3V,
I
D = 10 mA, f = 60 MHz
Note:
Marking is “ZP–”


Html Pages

1  2  3  4  5  6  7  8  9  10  11 


Datasheet Download

Go To PDF Page

Related Electronics Part Number

Part No.DescriptionHtml ViewManufacturer
3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier 1  2  3  4  5  More Hitachi Semiconductor
3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier 1  2  3  4  5  More Hitachi Semiconductor
3SK321 Silicon N-Channel Dual Gate MOS FET 1  2  3  4  5  More Hitachi Semiconductor
3SK322 Silicon N-Channel Dual Gate MOS FET 1  2  3  4  5  More Hitachi Semiconductor
3SK186 Silicon N-Channel Dual Gate MOS FET 1  2  3  4  5  More Hitachi Semiconductor
3SK194 Silicon N-Channel Dual Gate MOS FET 1  2  3  4  5  More Hitachi Semiconductor
3SK290 Silicon N-Channel Dual Gate MOS FET 1  2  3  4  5  More Hitachi Semiconductor
3SK295 Silicon N-Channel Dual Gate MOS FET 1  2  3  4  5  More Hitachi Semiconductor
3SK296 Silicon N-Channel Dual Gate MOS FET 1  2  3  4  5  More Hitachi Semiconductor
3SK298 Silicon N-Channel Dual Gate MOS FET 1  2  3  4  5  More Hitachi Semiconductor

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn