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3SK186 Datasheet(PDF) 3 Page - Hitachi Semiconductor

Part # 3SK186
Description  Silicon N-Channel Dual Gate MOS FET
Download  6 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

3SK186 Datasheet(HTML) 3 Page - Hitachi Semiconductor

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3SK186
3
Maximum Channel Power
Dissipation Curve
Ambient Temperature Ta (
°C)
200
300
100
0
50
100
150
Typical Output Characteristics
Drain to Source Voltage VDS (V)
20
16
12
8
4
02
6
10
VG1S = 0 V
VG2S = 3 V
48
1.6
1.4
1.0
0.8
0.6
0.4
0.2
1.2
Drain Current vs. Gate 1
to Source Voltage
Gate 1 to Source Voltage VG1S (V)
20
16
12
8
4
0
0
–0.8
1.6
3.2
0.8
2.4
VG2S = 0.5 V
VDS = 4 V
3
2
1.0
1.5
2.5
Drain Current vs. Gate 2
to Source Voltage
Gate 2 to Source Voltage VG2S (V)
20
16
12
8
4
0
0.8
2.4
4.0
1.6
3.2
VG1S = 0
VDS = 4 V
1.5
1.75
1.25
0.75
0.25
0.5
1.0


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