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2SK3349 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK3349 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SK3349 4 1.0 0.8 0.6 0.4 0.2 0 24 6 8 10 0.01 0.05 0.02 50 20 10 2 5 1.0 0.5 10 8 6 4 2 –40 0 40 80 120 160 0 0.1 I = 50mA D 25m A Pulse Test Pulse Test V = 4V GS 2.5 V Pulse Test V = 2.5 V GS I = 25m A D 4 V Gate to Source Voltage V (V) GS Drain to Source Satueation Voltage vs. Gate to Source Voltage Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 10m A 10mA 10,25,50m A 0.001 0.002 0.005 0.1 0.5 0.2 0.1 0.02 0.05 0.01 0.005 25 °C Tc = –25 °C 75 °C V = 10 V Pulse Teat DS Drain Current I (A) D |
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