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2SK3287 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK3287 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SK3287 4 1.0 0.8 0.6 0.4 0.2 0 24 6 810 5 4 3 2 1 –40 0 40 80 120 160 0 I = 300mA D 150m A Pulse Test Pulse Test I = 150m A D V = 4 V GS 10 V 0.1 0.2 0.5 1.0 Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.1 0.5 0.2 50 20 10 2 5 1.0 0.5 1.0 V = 4V GS 10 V Pulse Test Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Drain Current I (A) D Forwaed Transfer Admittance vs. Drain Current 50m A 50mA 50mA,150mA, 300m A 5 2 1.0 0.2 0.5 0.1 0.05 V = 10 V Pulse Test DS Tc = –25 °C 25 °C 75 °C |
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