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2SK3157 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SK3157 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK3157 3 Main Characteristics 40 30 20 10 0 50 100 150 200 200 100 20 2 10 0.1 0.3 1 3 10 300 100 20 16 12 8 4 0 2 468 10 20 16 12 8 4 0 12 34 5 0.2 0.1 1 Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics 2 V V = 2.5 V GS Pulse Test 5 V 25 °C V = 10 V Pulse Test DS 75 °C 500 0.5 5 50 0.05 30 1000 10 µ s 100 µ s DC Operation (Tc = 25 °C) Ta = 25 °C Operation in this area is limited by R DS(on) PW = 10 ms(1shot) 4 V 10 V Tc = –25 °C 3 V |
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