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2SK3157 Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SK3157 Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SK3157 5 0.1 1 3 10 100 0.3 30 010 20 30 40 50 10000 1000 3000 300 10 30 100 200 160 120 80 40 0 20 16 12 8 4 40 80 120 160 200 0 5000 500 200 100 50 0.1 0.2 1 510 1000 200 100 20 50 10 500 I = 20A D VGS VDS 20 10 0.5 2 Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics 20 V = 100 V 50 V 25 V DD V = 100 V 50 V 25 V DD V = 0 f = 1 MHz GS Ciss Coss Crss 1000 r t V = 10 V, V = 30 V PW = 5 µs, duty < 1 % GS DD t f d(on) t d(off) t 50 2000 di / dt = 50 A / µs V = 0, Ta = 25 °C GS |
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