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2SK3152 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SK3152 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK3152 3 Main Characteristics 40 30 20 10 0 50 100 150 200 100 3 10 1 0.1 0.01 12 10 20 100 10 8 6 4 2 0 12 34 5 0 2 468 10 Ta = 25 °C Tc = 75°C 25°C –25°C Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics Operation in this area is limited by R DS(on) V = 10 V Pulse Test DS 100 µs 1 ms PW =10 ms (1shot) DC Operation (Tc = 25°C) 10 µs 20 16 12 8 4 3.5 V 3 V V =2.5 V GS 10 V Pulse Test 6 V 4 V 0.3 0.03 200 30 550 |
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