Electronic Components Datasheet Search
Selected language     English  ▼
Part Name
         Description


2SK3150L Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. 2SK3150L
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  9 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
Logo 

   
 2 page
background image
2SK3150(L),2SK3150(S)
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
100
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
20
A
Drain peak current
I
D(pulse)
Note1
60
A
Body-drain diode reverse drain current
I
DR
20
A
Avalanche current
I
AP
Note3
20
A
Avalanche energy
E
AR
Note3
40
mJ
Channel dissipation
Pch
Note2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
100
V
I
D = 10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
——
±10
µAV
GS = ±16 V, VDS = 0
Zero gate voltege drain current
I
DSS
——10
µAV
DS = 100 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.5
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
R
DS(on)
4560m
I
D = 10 A, VGS = 10 V
Note4
resistance
R
DS(on)
6585m
I
D = 10 A, VGS = 4 V
Note4
Forward transfer admittance
|y
fs|
8.5
15
S
I
D = 10 A, VDS = 10 V
Note4
Input capacitance
Ciss
900
pF
V
DS = 10 V
Output capacitance
Coss
400
pF
V
GS = 0
Reverse transfer capacitance
Crss
210
pF
f = 1 MHz
Turn-on delay time
t
d(on)
15
ns
I
D = 10 A, VGS = 10 V
Rise time
t
r
120
ns
R
L = 3 Ω
Turn-off delay time
t
d(off)
200
ns
Fall time
t
f
150
ns
Body–drain diode forward voltage
V
DF
0.9
V
I
F = 20 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
90
ns
I
F = 20 A, VGS = 0
diF/ dt = 50A/
µs
Note:
4. Pulse test




Html Pages

1  2  3  4  5  6  7  8  9 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
2SJ471Silicon P Channel DV-L MOS FET High Speed Power Switching 1 2 3 4 5 MoreHitachi Semiconductor
2SJ533Silicon P Channel MOS FET High Speed Power Switching 1 2 3 4 5 MoreHitachi Semiconductor
2SJ552Silicon P Channel MOS FET High Speed Power Switching 1 2 3 4 5 MoreHitachi Semiconductor
2SK2729Silicon N Channel MOS FET High Speed Power Switching 1 2 3 4 5 MoreHitachi Semiconductor
2SK2940Silicon N Channel MOS FET High Speed Power Switching 1 2 3 4 5 MoreHitachi Semiconductor
2SK3134Silicon N Channel MOS FET High Speed Power Switching 1 2 3 4 5 MoreHitachi Semiconductor
2SK3158Silicon N Channel MOS FET High Speed Power Switching 1 2 3 4 Hitachi Semiconductor
HAT1016RSilicon P Channel Power MOS FET High Speed Power Switching 1 2 3 4 5 MoreHitachi Semiconductor
HAT2020RSilicon N Channel Power MOS FET High Speed Power Switching 1 2 3 4 5 MoreHitachi Semiconductor
HAT2043RSilicon N Channel Power MOS FET High Speed Power Switching 1 2 3 4 5 MoreHitachi Semiconductor

Link URL

Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Bookmark   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl