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2SK3150L Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SK3150L Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SK3150(L),2SK3150(S) 5 0.1 0.3 13 10 30 50 010 20 30 40 50 2000 10000 1000 100 200 500 200 160 120 80 40 0 20 16 12 8 4 20 40 60 80 100 0 500 50 5 10 2 1 20 200 1000 20 100 10 0.1 0.2 1 2 10 20 di / dt = 50 A / µs V = 0, Ta = 25°C GS 10 20 50 V = 0 f = 1 MHz GS Ciss Coss Crss I = 15 A D VGS VDS V = 100 V 50 V 25 V DD t f r t d(on) t d(off) t Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics V = 10 V, V = 30 V PW = 5 µs, duty < 1% GS DD V = 100 V 50 V 25 V DD 50 500 0.5 50 5000 100 200 |
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