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2SK3147S Datasheet(PDF) 4 Page - Hitachi Semiconductor

Part No. 2SK3147S
Description  Silicon N Channel MOS FET High Speed Power Switching
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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 4 page
background image
2SK3147(L),2SK3147(S)
4
0.1
1
10
0.2
5
0.5
0.02
0.05
0.01
0.50
0.40
0.30
0.20
0.10
–40
0
40
80
120
160
0
0.1
0.3
1
3
10
30
100
50
20
5
10
1
2
0.5
2
0.5
2.5
2.0
1.5
1.0
0.5
0
48
12
16
20
I
= 5 A
D
1 A
2 A
50
20
0.2
0.1
V
= 4 V
GS
10 V
V
= 4 V
GS
10 V
1, 2 A
5 A
25 °C
Tc = –25 °C
75 °C
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current
I
(A)
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
V
= 10 V
Pulse Test
DS
Pulse Test
1, 2 A
5 A




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