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2SK3076 Datasheet(PDF) 6 Page - Hitachi Semiconductor |
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2SK3076 Datasheet(HTML) 6 Page - Hitachi Semiconductor |
6 / 9 page 2SK3076(L),2SK3076(S) 6 20 16 12 8 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V (V) SD Reverse Drain Current vs. Source to Drain Voltage Pulse Test V = 0, –10 V GS 10 V 15 V 3 1 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 DM P PW T D = PW T ch – c(t) = s (t) • ch – c ch – c = 2.08 °C/W, Tc = 25 °C θ γ θ θ Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width |
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Similar Description - 2SK3076 |
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