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2SK3076 Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SK3076 Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SK3076(L),2SK3076(S) 5 010 20 30 40 50 5000 1000 100 10 500 400 300 200 100 0 20 16 12 8 4 8 1624 3240 0 I = 7 A D VGS VDS Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics 5 V = 100 V 250 V 400 V DD 0.2 0.5 1 25 10 20 5000 200 500 100 2000 1000 50 di / dt = 100 A / µs V = 0, Ta = 25 °C PulseTest GS Ciss Coss Crss V = 0 f = 1 MHz GS V = 400 V 250 V 100 V DD 0.2 0.5 1 25 10 20 500 20 50 10 200 100 5 V = 10 V, V = 30 V PW = 2 µs, duty < 1 % GS DD t f r t d(off) t d(on) t |
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Similar Description - 2SK3076 |
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