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2SK2978 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SK2978 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 8 page 2SK2978 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage V DSS 20 V Gate to source voltage V GSS ±10 V Drain current I D 2.5 A Drain peak current I D(pulse) Note1 5A Body-drain diode reverse drain current I DR 2.5 A Channel dissipation Pch Note2 1W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 20 ——V I D = 10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±10 ——V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS ——10 µAV DS = 20 V, VGS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±8V, VDS = 0 Gate to source cutoff voltage V GS(off) 0.5 — 1.5 V I D = 1mA, VDS = 10V Static drain to source on state resistance R DS(on) — 0.09 0.12 Ω I D = 1.5A, VGS = 4V Note3 Static drain to source on state resistance R DS(on) — 0.12 0.20 Ω I D = 1.5A, VGS = 2.5V Note3 Forward transfer admittance |y fs| 3.0 5.0 — S I D = 1.5A, VDS = 10V Note3 Input capacitance Ciss — 260 — pF V DS = 10V Output capacitance Coss — 150 — pF V GS = 0 Reverse transfer capacitance Crss — 75 — pF f = 1MHz Turn-on delay time t d(on) — 15 — ns V GS = 4V, I D = 1.5A Rise time t r — 70 — ns R L = 6.67 Ω Turn-off delay time t d(off) —55 — ns Fall time t f —70 — ns Body–drain diode forward voltage V DF — 0.9 — V I F = 2.5A, VGS = 0 Body–drain diode reverse recovery time t rr — 75 — ns I F = 2.5A, VGS = 0 diF/ dt =50A/ µs Note: 3. Pulse test 4. Marking is “ZY” |
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