2SK2869 datasheet(4/10 Pages) HITACHI

Part #	2SK2869

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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4 / 10 page

2SK2869

4

Main Characteristics

40

30

20

10

0

50

100

150

200

100

50

10

20

5

1

2

0.5

0.2

12

510

20

50

100

20

16

12

8

4

0

12

34

5

0

2

468

10

Ta = 25

°C

Tc = 75

°C

25

°C

–25

°C

Case Temperature

Tc (

°C)

Power vs. Temperature Derating

Drain to Source Voltage

V

(V)

DS

Maximum Safe Operation Area

Drain to Source Voltage

V

(V)

DS

Typical Output Characteristics

Gate to Source Voltage

V

(V)

GS

Typical Transfer Characteristics

Operation in

this area is

limited by R DS(on)

V

= 10 V

Pulse Test

DS

100

µs

1 ms

PW

=

10

ms

(1shot)

DC

Operation

(Tc

=

25

°C)

10

µs

50

40

30

20

10

3.5 V

4 V

5 V

V

= 3 V

GS

6 V

4.5 V

10 V

Pulse Test

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2SK2869 Datasheet(PDF) 4 Page - Hitachi Semiconductor

2SK2869 Datasheet(HTML) 4 Page - Hitachi Semiconductor

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