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2SK2851 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SK2851 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SK2851 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 60 ——V I D = 10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS —— 10 µAV DS = 60 V, VGS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16V, VDS = 0 Gate to source cutoff voltage V GS(off) 1.0 — 2.0 V I D = 1mA, VDS = 10V Static drain to source on state R DS(on) — 0.055 0.07 Ω I D = 2.5A, VGS = 10V* 1 resistance R DS(on) — 0.07 0.1 Ω I D = 2.5A, VGS = 4V* 1 Forward transfer admittance |y fs|5 7 — S I D = 2.5A, VDS = 10V* 1 Input capacitance Ciss — 500 — pF V DS = 10V Output capacitance Coss — 260 — pF V GS = 0 Reverse transfer capacitance Crss — 110 — pF f = 1MHz Turn-on delay time t d(on) — 10 — ns V GS = 10V, ID = 2.5A Rise time t r — 30 — ns R L = 12Ω Turn-off delay time t d(off) — 100 — ns Fall time t f —75— ns Body to drain diode forward voltage V DF — 0.9 — V I D = 5A, VGS = 0 Body to drain diode reverse recovery time t rr — 50 — ns I F = 5A, VGS = 0 diF/ dt = 50A/ µs Note: 1. Pulse test |
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