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IXTU1N80P Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTU1N80P Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. g fs V DS = 20V, ID = 0.5 • ID25, Note 1 0.30 0.55 S C iss 250 pF C oss V GS = 0V, VDS = 25V, f = 1MHz 22 pF C rss 5.3 pF t d(on) 20 ns t r 18 ns t d(off) 58 ns t f 42 ns Q g(on) 9.0 nC Q gs V GS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 1.4 nC Q gd 5.5 nC R thJC 3.0 °C/W R thCS (TO-220) 0.50 °C/W Source-Drain Diode Characteristic Values (T J = 25°C, Unless Otherwise Specified) Symbol Test Conditions Min. Typ. Max. I S V GS = 0V 1 A I SM Repetitive, Pulse Width Limited by T JM 4 A V SD I F = IS, VGS = 0V, Note 1 1.3 V t rr 700 ns Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Resistive Switching Times V GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 R G = 50Ω (External) I F = 1A, -di/dt = 100A/μs V R = 100V, VGS = 0V |
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