IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1

6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= 28A; V

Note 2

20

30

S

C

ies

2700

pF

28N120B

170

pF

C

oes

V

28N120BD1

180

pF

C

res

60

pF

Q

g

92

nC

Q

ge

I

17

nC

Q

gc

37

nC

t

d(on)

30

n s

t

ri

20

n s

t

d(off)

180

280

n s

t

f i

160

320

n s

E

off

2.0

5.0

mJ

t

d(on)

35

n s

t

ri

28

n s

E

on

2.5

mJ

t

d(off)

250

n s

t

f i

300

n s

E

off

8.0

mJ

R

thJC

0.5 K/W

R

thCK

0.25

K/W

Reverse Diode (FRED)

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

F

T

A

V

F

I

2.95

V

I

2.0

V

I

RM

I

14

A

t

rr

V

120

n s

t

rr

I

40

n s

R

thJC

2.5 K/W

Inductive load, T

°°°°C

I

V

Note 1

Inductive load, T

°°°°C

I

V

Note 1.

Notes:

1.

Switching times may increase for V

higher T

2.

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

IXGQ 28N120B

IXGQ 28N120BD1

TO-3P (IXTQ) Outline