2SK2684L datasheet(3/10 Pages) HITACHI

Part #	2SK2684L

Description	Silicon N Channel DV-L MOS FET High Speed Power Switching

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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3 / 10 page

2SK2684(L), 2SK2684(S)

3

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

30

——V

I

D = 10mA, VGS = 0

Gate to source breakdown

voltage

V

(BR)GSS

±20

——V

I

G = ±100µA, VDS = 0

Zero gate voltege drain

current

I

DSS

——

10

µAV

DS = 30 V, VGS = 0

Gate to source leak current

I

GSS

——

±10

µAV

GS = ±16V, VDS = 0

Gate to source cutoff voltage

V

GS(off)

1.0

—

2.0

V

I

D = 1mA, VDS = 10V

Static drain to source on state R

DS(on)

—2028m

Ω

I

D = 15A, VGS = 10V*

1

resistance

R

DS(on)

—3550m

Ω

I

D = 15A, VGS = 4V*

1

Forward transfer admittance

|y

fs|12

18

—

S

I

D = 15A, VDS = 10V*

1

Input capacitance

Ciss

—

750

—

pF

V

DS = 10V

Output capacitance

Coss

—

520

—

pF

V

GS = 0

Reverse transfer capacitance Crss

—

210

—

pF

f = 1MHz

Turn-on delay time

t

d(on)

—

16

—

ns

V

GS = 10V, ID = 15A

Rise time

t

r

—

260

—

ns

R

L = 0.67Ω

Turn-off delay time

t

d(off)

—85—

ns

Fall time

t

f

—90—

ns

Body to drain diode forward

voltage

V

DF

—

1.0

—

V

I

F = 30A, VGS = 0

Body to drain diode reverse

recovery time

t

rr

—

45

—

ns

I

F = 30A, VGS = 0

diF/ dt = 50A/

µs

Note:

1. Pulse test

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2SK2684L Datasheet(PDF) 3 Page - Hitachi Semiconductor

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