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2SK2554 Datasheet(PDF) 3 Page - Hitachi Semiconductor

Part No. 2SK2554
Description  Silicon N-Channel MOS FET
Download  10 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK2554 Datasheet(HTML) 3 Page - Hitachi Semiconductor

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2SK2554
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
——
±10
µAV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
100
µAV
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
4.5
6
m
I
D = 40 A
V
GS = 10 V*
1
5.8
10
m
I
D = 40 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|50
80
S
I
D = 40 A
V
DS = 10 V*
1
Input capacitance
Ciss
7700
pF
V
DS = 10 V
Output capacitance
Coss
4100
pF
V
GS = 0
Reverse transfer capacitance
Crss
760
pF
f = 1 MHz
Turn-on delay time
t
d(on)
60
ns
I
D = 40 A
Rise time
t
r
420
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
1200
ns
R
L = 0.75 Ω
Fall time
t
f
900
ns
Body to drain diode forward
voltage
V
DF
0.95
V
I
F = 75 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
105
ns
I
F = 75 A, VGS = 0
diF / dt = 50 A /
µs
Note:
1. Pulse Test


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