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2SK2529 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK2529 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 10 page 2SK2529 4 40 30 20 10 0 50 100 150 200 Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area 500 200 100 20 50 10 2 5 1 0.5 0.1 0.3 1 3 10 30 100 Operation in this area is limited by R DS(on) Ta = 25 °C 10 µs 1 ms PW = 10 ms (1shot) 100 80 60 40 20 0 Drain to Source Voltage V (V) DS Pulse Test 3.5 V 4 V Typical Output Characteristics 5 V 10 V 3 V V = 2.5 V GS 2 468 10 6 V 100 80 60 40 20 0 Gate to Source Voltage V (V) GS V = 10 V Pulse Test DS Typical Transfer Characteristics Tc = 75°C 25°C –25°C 12 34 5 |
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