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2SK2329S Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SK2329S Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 10 page 2SK2329(L), 2SK2329(S) 5 1.0 0.8 0.6 0.4 0.2 0 Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage 24 6 8 10 Pulse Test I = 10 A D 2 A 5 A Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current 0.1 0.2 0.5 1 2 5 10 20 50 100 V = 2.5 V GS 4 V Pulse Test 1 0.2 0.5 0.1 0.02 0.05 0.01 0.10 0.08 0.06 0.04 0.02 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 Pulse Test Static Drain to Source on State Resistance vs. Temperature I = 2 A, 5 A, 10 A D V = 4 V GS 2.5 V 2 A, 5 A, 10 A 0.1 Drain Current I (A) D Forward Transfer Admittance vs. Drain Current 0.3 1 3 10 30 100 50 20 10 2 5 1 0.5 25 °C Tc = –25 °C 75 °C DS V = 10 V Pulse Test |
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