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2SK2315 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK2315 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 7 page 2SK2315 4 1.0 0.8 0.6 0.4 0.2 0 Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage 4 8 12 16 20 1 A 0.5 A I = 2 A D Pulse Test Ta = 25 °C Drain Current I (A) D Static Drain to Source State Resistance vs. Drain Current 0.1 5 2 1 0.2 0.5 0.1 0.05 0.2 0.5 1 2 5 10 10 V Ta = 25 °C Pulse Test V = 3 V GS 1.0 0.8 0.6 0.4 0.2 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 Static Drain to Source on State Resistance vs. Temperature 1 A 0.5 A V = 10 V GS I = 2 A D V = 3 V GS I = 2 A D 1 A 0.5 A Drain Current I (A) D Forward Transfer Admittance vs. Drain Current 10 2 5 1 0.2 0.5 0.1 0.1 0.2 0.5 1 2 5 10 DS V = 10 V Pulse Test Tc = –25 °C 25 °C 75 °C |
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