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2SK2212 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. 2SK2212
Description  Silicon N-Channel MOS FET
Download  10 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK2212 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SK2212
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
200
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
10
A
Drain peak current
I
D(pulse)*
1
40
A
Body to drain diode reverse drain current
I
DR
10
A
Channel dissipation
Pch*
2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes
1. PW
≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25
°C


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